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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3365
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers.
ORDERING INFORMATION
PART NUMBER 2SK3365 2SK3365-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Low on-resistance RDS(on)1 = 14 m (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 m (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 m (MAX.) (VGS = 4.0 V, ID = 15 A) * Low Ciss : Ciss = 1300 pF (TYP.) * Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 30 120 36 1.0 150 -55 to + 150
V V A A W W C C
Total Power Dissipation (TC = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Note PW 10 s, Duty cycle 1%
THERMAL RESISTANCE
Channel to case Thermal Resistance Channel to ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 3.48 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14255EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark shows major revised points. 1999
2SK3365
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A/s ID = 30 A, VDD = 24 V, VGS = 10 V ID = 15 A, VGS = 10 V, VDD = 15 V, RG = 10 TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15 A VGS = 4.0 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 1300 405 190 37 500 75 95 25 4.5 7.0 1.0 35 32 1.5 8.0 MIN. TYP. 11.5 15.2 18 2.0 16.0 10 10 MAX. 14 21 29 2.5 UNIT m m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
0
10% 90%
VGS
90%
D.U.T. IG = 2 mA 50 RL VDD
90%
PG.
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
2
Data Sheet D14255EJ3V0DS
2SK3365
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 VGS =10 V 100 Pulsed
ID - Drain Current - A
100
d ite ) Lim10 V n) o = ID(DC) = 30 A S( RD VGS (at
PW
=1
00
ID - Drain Current - A
ID(pulse) = 120 A
1m
Po we r
s
80 60 40 20
s
4.5 V
10
Di
ss
10 ms 10 0m s
ipa tio n Lim
4.0 V
ite
1 TC = 25C 0.1 Single Pulse 0.1
d
1
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 100
ID - Drain Current - A
10 1 0.1 0.01 TA = 25C -25C -50C 1 2 3 4 5 Pulsed 6 7 TA = 150C 75C
0.001 0
VGS - Gate to Source Voltage - V
Data Sheet D14255EJ3V0DS
3
2SK3365
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 125 C/W 100
10 Rth(ch-C) = 3.48 C/W
1
Single Pulse 0.1 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
100
| yfs | - Forward Transfer Admittance - S
Tch = -50C -25C 25C 10 Tch = 75C 150C 1
VDS = 10 V Pulsed
RDS(on) - Drain to Source On-state Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40
30 20
ID = 15 A
10
0.1 0.1
1
10
100
0
5
10
15
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V
100
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.5 VDS = 10 V ID = 1 mA 2
Pulsed
80 VGS = 4.0 V 4.5 V
60
1.5
40
1 0.5 0
20 0 0.1
10 V
1
10
100
1000
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14255EJ3V0DS
2SK3365
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 VGS = 4.0 V 4.5 V 20 10 V
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100 VGS = 10 V 0V
10
1
10
0.1 0.01 0
0
ID = 15 A - 50 0 50 100 150
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1.2 0.8 1.6 0.4 VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
10000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz
tr 1000 tf 100 td(on) td(off)
1000
Ciss
10 VDD = 15 V VGS = 10 V RG = 10 1 10 100 ID - Drain Current - A
Coss 100 0.01 Crss 0.1 1 10 100
1 0.1
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
30 VDD = 24 V 15 V 6V VGS VDS
12 10 8 6
100
20
10
10
4 2
1 0.1
1
10
100
0
10
20
30
40
0
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 30 A 14
Data Sheet D14255EJ3V0DS
5
2SK3365
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.50.2 5.00.2 4
1.60.2
2.30.2 0.50.1
0.8 4.3 MAX.
6.50.2 5.00.2 4
1.5-0.1
+0.2
2.30.2 0.50.1
5.50.2
1
2
3
13.7 MIN.
7.0 MIN.
1
2
3
1.10.2
+0.2
0.5-0.1
2.3 2.3
0.75
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D14255EJ3V0DS
0.7
1.10.2
2.0 MIN.
5.50.2 10.0 MAX.
1.0 MIN. 1.8 TYP.
2SK3365
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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